Dual junction fiber-coupled laser diode and related methods

ABSTRACT

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a divisional of co-pending U.S. applicationSer. No. 15/363,874, filed Nov. 29, 2016, the contents of which areincorporated herein by reference.

FIELD OF THE DISCLOSURE

The present disclosure is generally related to laser diodes and moreparticularly is related to a dual junction fiber-coupled laser diode andrelated methods

BACKGROUND OF THE DISCLOSURE

Laser diodes provide inexpensive, reliable sources of high brightnessoptical power over a broad spectral range. Many applications requirethat the light be coupled into a fiber to transport the light from thesource to the target application. Emission from laser diodes, inparticular from edge-emitting laser diodes is inherently difficult tocouple into a fiber due to astigmatism, very high elliptical aspectratio and the difficulty in controlling the phase front of emittedlight.

Several patents and publications have been directed to improving theability to couple edge-emitting laser diodes. See, for example, U.S.Pat. Nos. 5,212,706A, 5,202,706, 5,679,963A, 6,535,541, and 8,848,753.For example, some patents have described the use of the tunnel junctionin edge emitting laser diodes to increase the stacking density of laserdiodes by incorporating multiple emitters in a single epitaxialstructure. The use of edge emitters with multiple, separate beams, eachlasing at different wavelengths has also been described. This approachmay enable very compact vertical stacking as well as emission ofmultiple wavelengths from a single chip.

Edge-emitting short wavelength III-nitride based laser diodes poseunique challenges due to the difficulty of activating Mg acceptors inp-type MOCVD grown GaN. A solution to this challenge has been describedin which a tunnel junction was used along with multiple epitaxial growthsteps to improve activation of Mg-doped nitrides.

Spatial combining techniques may be used to couple the emission frommultiple laser diodes into a single optical fiber. Spatial combininggenerally requires alignment of multiple optical components such aslenses, reflectors and prisms. U.S. Pat. No. 8,848,753 B2 describes atechnique that improves coupling in a compact form factor using aspatial combining technique to reduce sensitivity to mechanicaltolerances on the mounting baseplate while compensating mechanicalmisalignment with careful optical alignment of prisms to couple lightinto a fiber.

FIG. 1 is a schematic diagram of an edge emitting laser diode 1representative of the current state of the art, in accordance with theprior art. The laser diode 1 is comprised of an electrical contact 10that is used to inject electrical current into the epitaxial layers 12at the heavily doped p-type cap layer 13. The current flows through thep-type cap layer 13 into a top p-doped cladding layer 14 that has alower optical refractive index than the adjacent guiding layers 15, 17.Current passes through the guide layer 15 into the active layer 16causing the optical gain that is responsible for stimulated emission,and hence the laser operation. The guiding layers 15, 17 are typicallyundoped or lightly doped and form a thin layer that guides optical poweralong the length of the laser cavity. The active layer 16 or gain mediumprovides the optical gain responsible for stimulated emission and hencelasing. Carriers (electrons) injected from the bottom contact 21similarly pass through the substrate 20, a buffer layer 19, a lowercladding layer 18, and into the active region. The lasing mechanism canbe easily understood as the conversion of carriers from one type, forexample a “hole” to the other type “electron” via recombination bystimulated emission. The buffer layer 19 is typically grown on top ofthe substrate 20 in order to improve the crystal quality in the laserand reduce the concentration of impurities.

Efficient operation of the laser diode 1 requires that optical power beconfined in both the vertical and lateral dimensions. Vertical guidingmay be achieved by sandwiching the active and guide layers 15, 16, 17between cladding layers 14, 18 having lower refractive index than theguide layers 15, 17. Lateral guiding, or optical confinement, resultsfrom the lateral confinement of injected carriers (i.e. gain guiding)and also from the shape of the ridge 22. Hence, the lateral waveguide isdirectly linked to the current injection by the shape of the ridge 22.

The total thickness of the vertical waveguide may be defined by thethickness of the guide and active layers 15, 16, and 17. This thicknessis dictated by appropriate trade-offs between conflicting requirementsof the laser diode operation and performance. The total seriesresistance of the laser diode 1 must be kept as low as possible sinceOhmic loss is a major source of heating inside the laser diode 1 whichdegrades performance and is a major factor limiting maximum emittedoptical power. The resistance is reduced by increasing conductivity inthe clad layers 14, 18 by incorporating small amounts of impurities(dopants) in these layers. The guide layers 15, 17 are nominally undoped(intrinsic) or only lightly doped near the guide/clad interface sinceOhmic loss does not occur near the p-n interface because carriertransport in this region is driven by the carrier density gradient(diffusion) rather than by the electric field (drift).

FIG. 2 is a schematic diagram of the edge emitting laser diode 1 of FIG.1 and corresponding refractive index and optical intensity graph 2, inaccordance with the prior art. Specifically, the graph 2 of FIG. 2 showsthe refractive index 25 and optical intensity 26 along the growthdirection 41 of the laser diode 1, e.g., showing the optical intensity26 profile along the direction of current flow (aligned with growthdirection 41) with the p-type contact located along the left side of thelaser diode 1. The overlap between the optical intensity 26 and theelectrically conducting cladding layers 14, 18 leads to loss due toabsorption by free carriers. The free carrier absorption is thereforemitigated by moving the doping as far away from the optical mode aspossible. However, moving the dopant barriers further away from theintrinsic region eventually results in increased series resistance. Theoptimum distance of the dopant barrier from the center of the waveguideis determined by the depletion width of the P-I-N diode structure. Thedepletion width, in turn, is an inherent property of the semiconductormaterial. Therefore, the optical intensity profile of the light in thevertical waveguide is determined by this fundamental material property.

FIG. 3 is a schematic diagram of the edge emitting laser diode 1 of FIG.1 showing the optical intensity of the laser diode 1 at the laser facet40, in accordance with the prior art. FIG. 3 illustrates theconsequences of fundamental issues discussed relative to FIGS. 1-2.Specifically, the width of the optical intensity profile at the laserfacet 40 is much smaller in the vertical direction 44 than in thelateral direction 45. The light emitted from the laser diode 1 divergesrapidly in the direction of current flow, aligned with the verticaldirection 44 of the laser diode 1, while the divergence in the lateraldirection 45 is much smaller. Because of the inherent link betweenelectrical current flow and the optical waveguide, high power laserdiodes 1 exhibit very high aspect ratio elliptic near-field intensity atthe laser facet. The emitted light is also strongly astigmatic, furthercomplicating the task of coupling the emitted laser light into anoptical medium. The axis perpendicular to the direction of current flow,e.g., aligned with the lateral direction 45, is referred to as theslow-axis and the optical near-field can be approximately 100 microns ormore wide, while the width of the optical near-field along thefast-axis, e.g., aligned with the vertical direction 44, is on the orderof a few microns or less, depending on the emission wavelength. Thefar-field divergence 43 from the laser is also depicted in FIG. 3,showing the relationship between the dimension of the optical near-fieldalong the slow and fast axes to the optical far field.

As can be seen, the resulting emission from the laser diode 1 isconsequently elliptical and astigmatic, which is less than optimal formany applications. For one, the conventional laser diode 1 requiresnumerous components to collimate the laser emission initially, andadditional components to focus the laser emission for a particularapplication. Additionally, the laser diode 1 can be costly tomanufacture both in terms of component or material costs and theprocessing time associated with manufacture. Another drawback of theconventional art is that the optical density on the front facet of thelaser diode for a given output power is concentrated in the verticaldirection, which increases the likelihood of failure due to opticalmirror damage.

Thus, a heretofore unaddressed need exists in the industry to addressthe aforementioned deficiencies and inadequacies.

SUMMARY OF THE DISCLOSURE

Embodiments of the present disclosure provide a system and method for alaser diode apparatus. Briefly described, in architecture, oneembodiment of the laser diode apparatus, among others, can beimplemented as follows. A first waveguide is connected in series with asecond waveguide in a single epitaxial structure. A tunnel junction ispositioned between the first and second waveguides. A single collimatoris positioned in an output path of laser beams emitted from the firstand second waveguides.

In one aspect of the apparatus, an optical output of the singlecollimator is directed into an optical fiber.

In another aspect of the apparatus, a corrective optical assembly ispositioned between the single collimator and the optical fiber, whereinthe corrective optical assembly receives the optical output of thesingle collimator and an optical output of the corrective opticalassembly is directed into the optical fiber, wherein the correctiveoptical assembly comprises: a second collimator; a corrective opticdevice; and a focusing lens.

In yet another aspect of the apparatus, the single collimator is afast-axis collimator and the second collimator is a slow-axiscollimator.

In another aspect of the apparatus, at least one of the first and secondwaveguides further comprises: first and second cladding layers; firstand second guide layers positioned between the first and second claddinglayers; and an active layer positioned between the first and secondguide layers.

In another aspect of the apparatus, the tunnel junction furthercomprises first and second heavily doped layers positioned in contactwith one another.

In this aspect of the apparatus, each of the first and second heavilydoped layers has a thickness dimension of substantially between 10-40nm.

In this aspect of the apparatus, the first heavily doped layer furthercomprises a n++ layer and the second heavily doped layer furthercomprises a p++ doped layer.

In this aspect of the apparatus, a n-type cladding layer of the firstwaveguide is positioned in contact with the n++ layer and a p-typecladding layer of the second waveguide is positioned in contact with thep++ layer.

The present disclosure can also be viewed as providing a fiber-coupledlaser diode device. Briefly described, in architecture, one embodimentof the device, among others, can be implemented as follows. A firstguiding layer is connected to a second guiding layer in a singleepitaxial structure, wherein each of the first and second guiding layershave an active layer. A tunnel junction is positioned between the firstand second guiding layers, wherein the tunnel junction is formed fromtwo thin, heavily doped layers positioned in contact with one another. Acommon vertical waveguide is shared by the active layers of the firstand second guiding layers, wherein the common vertical waveguide isformed from the first guiding layer in contact with one of the two thin,heavily doped layers and the second guiding layer positioned in contactwith another of the two thin, heavily doped layers.

In one aspect of the device, the active layer of each of the first andsecond guide layers further comprises a quantum well active layer.

In another aspect of the device, the two thin, heavily doped layers ofthe tunnel junction further comprise a n++ layer and a p++ layer,wherein the first guiding layer is a n-guide layer and the secondguiding layer is a p-guide layer.

In another aspect of the device, the first guiding layer furthercomprises an undoped guide layer and a n-guide layer positioned adjacentto the n++ layer, wherein the n-guide layer contacts the n++ layer, andwherein the second guiding layer further comprises an undoped guidelayer and a p-guide layer, wherein the p-guide layer contacts the p++layer.

In yet another aspect of the device, the n-guide layer and the p-guidelayer of the first and second guiding layers, respectively, have anoptical refractive index equal to or greater than an optical refractiveindex of the undoped guide layers of the first and second guidinglayers.

The present disclosure can also be viewed as providing methods ofcoupling optical outputs from edge-emitting laser diodes into an opticalfiber. In this regard, one embodiment of such a method, among others,can be broadly summarized by the following steps: forming afiber-coupled laser diode device by connecting a first guiding layer toa second guiding layer in a single epitaxial structure, wherein a tunneljunction is positioned between the first and second guiding layers;emitting optical outputs of first and second guiding layers into asingle collimator; and emitting the optical output from the singlecollimator into an optical fiber.

In another aspect of the method, the optical output of the singlecollimator is corrected with a corrective optical assembly positionedbetween the single collimator and the optical fiber, wherein thecorrective optical assembly comprises: a second collimator; a correctiveoptic device; and a focusing lens.

In another aspect of the method, the tunnel junction is formed betweenthe first and second guiding layers from two thin, heavily doped layerspositioned in contact with one another.

In yet another aspect of the method, active layers of the first andsecond guiding layers share a common vertical waveguide formed from thefirst guiding layer in contact with one of the two thin, heavily dopedlayers and the second guiding layer positioned in contact with anotherof the two thin, heavily doped layers.

In another aspect of the method, the first guiding layer furthercomprises an undoped guide layer and a n-guide layer positioned adjacentto the n++ layer, wherein the n-guide layer contacts the n++ layer, andwherein the second guiding layer further comprises an undoped guidelayer and a p-guide layer, wherein the p-guide layer contacts the p++layer.

In yet another aspect of the method, the n-guide layer and the p-guidelayer of the first and second guiding layers, respectively, have anoptical refractive index equal to or greater than an optical refractiveindex of the undoped guide layers of the first and second guidinglayers.

In yet another aspect of the disclosure, a lateral gain profile of theactive regions to the gain profile of the lateral waveguide may bematched by implanting ions on either side of the lateral waveguide at adepth proximate to the tunnel junction.

Other systems, methods, features, and advantages of the presentdisclosure will be or become apparent to one with skill in the art uponexamination of the following drawings and detailed description. It isintended that all such additional systems, methods, features, andadvantages be included within this description, be within the scope ofthe present disclosure, and be protected by the accompanying claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the disclosure can be better understood with referenceto the following drawings. The components in the drawings are notnecessarily to scale, emphasis instead being placed upon clearlyillustrating the principles of the present disclosure. Moreover, in thedrawings, like reference numerals designate corresponding partsthroughout the several views.

FIG. 1 is a schematic diagram of an edge emitting laser dioderepresentative of the current state of the art, in accordance with theprior art.

FIG. 2 is a schematic diagram of the edge emitting laser diode of FIG. 1and corresponding refractive index and optical intensity graph, inaccordance with the prior art.

FIG. 3 is a schematic diagram of the edge emitting laser diode of FIG. 1showing the optical intensity of the laser diode at the laser facet, inaccordance with the prior art.

FIG. 4 is a schematic diagram of a coupled laser diode apparatus, inaccordance with a first exemplary embodiment of the present disclosure.

FIG. 5 is a schematic diagram of a coupled laser diode apparatus in usewith optical components, in accordance with the first exemplaryembodiment of the present disclosure.

FIG. 6 is a schematic diagram of a fiber-coupled laser diode device, inaccordance with a second exemplary embodiment of the present disclosure.

FIG. 7 is a schematic diagram of the fiber-coupled laser diode device ofFIG. 6 and corresponding refractive index and optical intensity graph,in accordance with the second exemplary embodiment of the subjectdisclosure.

FIG. 8 is a graph of the optical power relative to drive current ofconventional laser diodes and the fiber-coupled laser diode device ofFIG. 6, in accordance with the second exemplary embodiment of thesubject disclosure.

FIG. 9 is a schematic diagram of the fiber-coupled laser diode of FIG.6, in which dopants are passivated to restrict lateral current flow, inaccordance with a third exemplary embodiment of the subject disclosure.

FIG. 10 is a flowchart illustrating a method of coupling optical outputsfrom edge-emitting laser diodes into an optical fiber, in accordancewith a fourth exemplary embodiment of the disclosure.

FIG. 11 is a flowchart illustrating a method of coupling optical outputsfrom edge-emitting laser diodes into an optical fiber, in accordancewith the fourth exemplary embodiment of the disclosure.

DETAILED DESCRIPTION

To overcome the deficiencies of the conventional art, the subjectdisclosure provides devices and methods which utilize a tunnel junctionwithin the epitaxial layers of an edge-emitting laser diode to increasethe power coupled from a laser diode or laser diode bar into a singleoptical fiber with relaxed requirements on external optical componentsfor collimating and focusing the light. Tandem tunnel junctions arecommonly used in solar cells, whereby the tunnel junction enablesincreased efficiency for the conversion of light to electrical energy byproviding a means of stacking multiple p-n junctions to collect incidentsolar power. In accordance with the present disclosure, laser diodesthat emit light from one of the contact surfaces through an electricallyconducting mirror, known as vertical cavity surface emitting lasers(VCSEL's), can be designed to benefit from tunnel junctions. The tunneljunction provides a means by which multiple gain regions can beincorporated in a single cavity to increase coherent power. Whileincreased fiber coupled power is advantageous for numerous applications,other less apparent advantages result from the novel structures andmethods disclosed herein. In one example, the tunnel junction may becomprised of thin, heavily doped p++ and n++ layers between two P-I-Nsemiconductor diodes to reduce divergence from the diode along thefast-axis, e.g., in the direction of current flow within anedge-emitting laser diode, to improve efficiency of optical couplinginto a fiber, and reduce cost of fiber-coupled laser diodes

One benefit the subject disclosure may have is using fewer opticalcomponents to couple the power into the fiber. Additionally, both partcost and process time associated with optical alignment can be reducedwhen the optical emission is more symmetric, as discussed in furtherdetail herein. Reliability is also improved when fewer components arerequired to collimate and focus the emission from the laser diode. Theoptical density on the front facet of the laser diode is reduced for agiven output power because the optical power is spread over a largerarea along the vertical (epitaxial growth) direction. Probability offailure due to optical mirror damage is therefore reduced.

Additionally, the subject disclosure can be used to significantlyincrease the width of the optical intensity at the laser facet along thefast axis, thereby reducing the fast-axis divergence with minimalincrease in optical loss. In some examples, the brightness of theemitted optical beam can be nearly doubled relative to a conventionallaser diode.

FIG. 4 is a schematic diagram of a laser diode apparatus 100, inaccordance with a first exemplary embodiment of the present disclosure.Specifically, FIG. 4 illustrates an isometric view and correspondingcross-sectional view diagrams of the laser diode apparatus 100 havingtwo waveguides with respective gain (active) layers 135, 141 connectedin series in a single epitaxial structure 131 with a tunnel junction 138sandwiched between the two waveguides. Here, there are two (or more)waveguides which are uncoupled or operating incoherently. One waveguide,i.e., the top waveguide includes a heavily doped p-type cap layer 132, ap-type clad layer 133, a top waveguide layer 134, a top active region orlayer 135 where optical gain occurs, a bottom guide layer 136 in the topwaveguide, and a bottom n-type cladding layer 137 for the top waveguide.The other waveguide, i.e., the bottom waveguide includes a p-typecladding layer 139, the top guide layer 140, a bottom active region orlayer 141 for optical gain, a bottom waveguide 142, a bottom n-typecladding layer 143. The tunnel junction 138 is positioned between thetop and bottom waveguides, such that it is in contact with the bottomn-type cladding layer 137 of the top waveguide and the p-type claddinglayer 139 of the bottom waveguide. The laser diode apparatus 100 alsoincludes a buffer layer 144 and the substrate 145. The substrate 144,the bottom contact 121, the top contact 110, and the ridge 122 may besimilar to a conventional edge-emitting laser diode, as describedrelative to FIG. 1.

The tunnel junction 138 positioned between the two waveguides to enablecurrent flow from the n-type cladding layer 137 in the waveguide intothe p-type cladding layer 139 of the bottom waveguide. The tunneljunction 138 conducts current when reverse biased via tunneling. FIG. 4depicts a blown-up view of the tunnel junction 138 with the n-typecladding layer 137 and the p-type cladding layer 139. As can be seen,the tunnel junction 138 may be formed from a very thin, heavily dopedn++ layer 138 a and an adjacent, very thin heavily doped p++ layer 138b. The two thin, heavily doped layers 138 a, 138 b are positioned incontact with one another and may each have a thickness of approximate10-40 nm.

Since the two waveguides of the laser diode apparatus 100 are connectedin series, the emitted optical power may be nearly twice that from asingle emitter. The voltage drop across two waveguides will beapproximately twice that of a single emitter. It is noted thatadditional waveguides and tunnel junctions can also be used to form asingle emitter with multiple waveguides and tunnel junctions.

One benefit of the laser diode apparatus 100 is that the two waveguidesare positioned closer to each other than would be possible if each weregrown on a separate wafer, which allows common optical components to beused to couple optical power from both diodes into an optical fiber,thereby reducing assembly effort and part cost. FIG. 5 is a schematicdiagram of a laser diode apparatus 100 in use with optical components,in accordance with the first exemplary embodiment of the presentdisclosure. In particular, FIG. 5 illustrates optical components for asingle emitter or for a bar consisting of multiple emitters stackedvertically in the same epitaxial structure. As shown, the laser diodeapparatus 100 emits laser beams 151, 152 into a first collimator 153,which may be a single fast-axis collimator. Two laser beams 151, 152 aredepicted, corresponding to a laser diode apparatus 100 with twowaveguides or diodes, but additional laser beams could be emitted withadditional waveguides or diodes, as may vary by design. The firstcollimator 153 may be positioned in an output path of the laser beams151, 152 emitted by the waveguides, such that the laser beams 151, 152can be collimated using only a single collimator 153. In contrast toconventional coupled diode arrays, which have a larger spaced distancebetween waveguides and therefore require multiple collimators or otheroptical devices to process the laser beams emitted from the waveguides,the laser diode apparatus 100 of the subject disclosure may use only asingle collimator 153 to initially collimate the laser beams 151, 152.

The optical output of the first collimator 153 may be emitted into anoptical fiber 157 which can direct the optical energy to any desiredlocation. It is possible to further refine the optical output of thefirst collimator 153 using a corrective optics assembly 154, which mayinclude a variety of optical components. When used, the correctiveoptical assembly 154 may be positioned between the single collimator 153and the optical fiber 157 and receive the optical output of the singlecollimator 153, process the optical energy, and output it to the opticalfiber 157. The corrective optics assembly 154 may include, for example,an additional collimator 155, such as a slow-axis collimator, amongother corrective optical devices. The output of the additionalcollimator 155 may be directed to a focusing lens 156. Additionalcorrective devices may be inserted between the slow-axis collimator 155and a focusing lens 156 but are not shown in FIG. 5 for the sake ofclarity in illustration. The corrected, collimated beam is then focusedinto the optical fiber 157 with the focusing lens 156. One advantage ofthis design is that fewer components are required to couple twice theoptical power into a fiber. The advantages apply to any emitter or barthat can use common slow-axis optics.

FIG. 6 is a schematic diagram of a fiber-coupled laser diode device 200,in accordance with a second exemplary embodiment of the presentdisclosure. Specifically, FIG. 6 illustrates an isometric view andcorresponding cross-sectional view diagrams of the fiber-coupled laserdiode device 200 having two guide layers with respective gain (active)layers 235, 241 connected in a single epitaxial structure 231 with atunnel junction 238 sandwiched between the two active layers 235, 241 ina single waveguide. The fiber-coupled laser diode device 200 may besimilar to the laser diode apparatus 100 descried relative to FIG. 4 andmay include any of the components and functionality described relativeto FIGS. 4-5.

As shown in FIG. 6, the fiber-coupled laser diode device 200 has onewaveguide characterized as a single emitter formed from two laser diodestructures, e.g., top and bottom diodes, each having active layers 235,241 and guiding layers, respectively. The top diode structure includes aheavily doped p-type cap layer 232, a p-type clad layer 233 for the topdiode, a top waveguide layer 234 for the top diode, a top active regionor layer 235 where optical gain occurs, a bottom guide layer 236 in thetop laser diode, and a bottom n-type guide layer 237 for the top laserdiode. The other laser diode structure, i.e., the bottom diode includesa p-type guide layer 239 for the bottom diode, the top guide layer 240for the bottom diode, a bottom active region or layer 241 for opticalgain, a bottom guide layer 242 for the bottom diode, a bottom n-typecladding layer 243 for the bottom diode.

The fiber-coupled laser diode structure shown in FIG. 6 is similar tothe uncoupled waveguides of the epitaxial structure in FIG. 4 with someimportant modifications. The lower cladding layer 137 of the upper laserdiode and the upper cladding layer 139 of the lower laser diode of FIG.4 are replaced with a bottom n-type guide layer 237 and a p-type guidelayer 239 for the bottom emitter, each of which is formed from amaterial having similar or even slightly larger optical refractive indexthan the guiding layers adjacent to the active layer for each waveguide,i.e., the bottom guide layer 236 and the top guide layer 240,respectively.

As shown, the tunnel junction 238 is positioned between the top andbottom diodes, such that it is in contact with the bottom n-type guidelayer 237 of the top laser diode and the p-type guide layer 239 of thebottom laser diode. The fiber-coupled laser diode device 200 alsoincludes a buffer layer 244 and the substrate 245. The substrate 244,the bottom contact 221, the top contact 210, and the ridge 222 may besimilar to as described in FIG. 4. The tunnel junction 238 positionedbetween the two laser diodes enables current flow from the n-type guidelayer 237 in the top laser diode into the p-type guide layer 239 of thebottom laser diode. FIG. 6 depicts a blown-up view of the tunneljunction 238 with the n-type guide layer 237 and the p-type guide layer239. As can be seen, the tunnel junction 238 may be formed from a verythin, heavily doped n++ layer 238 a and an adjacent, very thin heavilydoped p++ layer 238 b. The two thin, heavily doped layers 238 a, 238 bare positioned in contact with one another and may each have a thicknessof approximate 10-40 nm.

This embodiment of the fiber-coupled laser diode device 200 achievesincreased brightness while decreasing the fast-axis divergence.Increased brightness is due, at least in part, to the fact that thewaveguides are fiber-coupled, such that they lase coherently. The slowerfast-axis divergence places less stringent restrictions on the fast-axiscollimator while the increased brightness results in nearly twice thefiber coupled power for a given optical fiber numerical aperture andlaser diode drive current. In this embodiment, the two active layers235, 241 may share a common vertical waveguide and operate coherently,meaning that stimulated emission from both active layers 235, 241results in increased optical power in a single vertical optical mode. Itis noted that it may be important to select the layer thicknesses andmaterial compositions to achieve the desired laser performance. Forexample, very high power may be achieved using a longer cavity. In thiscase, some waveguide loss may be acceptable to improve the brightness bymoving the active layers further apart. The greater separation betweenactive layers reduces modal gain resulting in higher threshold current,but the vertical mode will be broader which mitigates asymmetry therebyimproving fiber coupling efficiency.

FIG. 7 is a schematic diagram of the fiber-coupled laser diode device200 of FIG. 6 and corresponding refractive index and optical intensitygraph 202, in accordance with the second exemplary embodiment of thesubject disclosure. Relative to FIGS. 6-7, the refractive index profile271 and fast-axis near-field intensity 272 are shown for the coherenttunnel junction edge emitting laser diode 200 along the growth direction31. FIG. 7 also shows the active layers 235, 241 as two quantum wellactive layers in the diodes. These quantum well active layers 235, 241may be comprised of one or more quantum wells. The tunnel junction 238is located in the middle of the two diodes.

Numerous characteristics depicted in FIG. 7 may differ from those of aconventional edge emitting laser diode, thus showing some of thebenefits of the subject disclosure. For example, the active layers 235,241 are not located at the same position as the peak intensity of theoptical mode 272 as would conventionally be done. Additionally, heavilydoped layers required to create the tunnel junction 237, 238, and 239are located in the middle of the waveguide. Consequently, optical lossdue to free carrier absorption may be higher than that of a conventionallaser diode and the modal gain is much less than would be achieved ifthe gain of the active layer were aligned with the peak opticalintensity. Consequently, greater electrical current is required to causelaser emission. In other words, the threshold current for a givencontact area and cavity length is increased. These disadvantages may bemore than compensated by the increased brightness at high drive currentsthat result from higher slope efficiency, coherent lasing from seriallyconnected p-n junctions along with improved optical beam parameter. Thelatter is possible because the two active regions 235, 241 may beseparated by more than a micron. Care must be taken in the design of thelayer properties and thickness to insure that the lowest order verticaloptical mode has higher gain than other propagating vertical modes sothe fundamental vertical mode is preferentially selected when lasingcommences.

FIG. 8 is a graph 280 of the optical power relative to drive current ofconventional laser diodes and the fiber-coupled laser diode device 200of FIG. 6, in accordance with the second exemplary embodiment of thesubject disclosure. In the graph 280 of FIG. 8, a representative curvedepicts the output power 282 of a conventional edge-emitting laserdiode, such as that depicted in FIGS. 1-2. The corresponding voltage 284is also shown. The output power 286 and voltage 288 of the fiber-coupledlaser diode device of FIG. 6 are also depicted in FIG. 8. As can be seenin FIGS. 6-8, the forward voltage drop 288 across the fiber-coupledlaser diode device 200 is approximately twice the voltage 284 of aconventional single junction emitter. Also, the threshold current of thefiber-coupled laser diode device 200 is higher than that of theconventional laser diode for the reasons discussed so far. With regardto total electrical to optical conversion efficiency, the fiber-coupledlaser diode device 200 may not exceed that of a conventional laserdiode. However, because the emission is coherent, the brightness fromthe fiber-coupled laser diode device 200 will be significantly higher,enabling increased total power that can be coupled to a multimode fiber.Similar to the first embodiment, restrictions on optical components arealso relaxed because higher power at lower divergence is emitted in asmaller area than two equivalent stacked lasers or laser bars.

FIG. 9 is a schematic diagram 290 of the fiber-coupled laser diode ofFIG. 6, in which dopants are passivated to restrict lateral currentflow, in accordance with a third exemplary embodiment of the subjectdisclosure. Specifically, as shown in FIG. 9, ions 275 have beenimplanted to passivate dopants outside the lateral in the heavily dopedregions of the tunnel junction, between the active layers 235, 241 ofthe first and second guiding layers discussed relative to FIGS. 6-7. Theimplanted ions deactivate dopant impurities leading to increased localresistivity. Lateral current confinement reduces optical loss due tomismatch between the lateral gain profile of the upper and lower quantumwells. Accordingly, ion implantation can be used to improve overall gainand lateral (slow-axis) beam quality by restricting lateral currentflow, which serves to match the lateral gain profile of the bottomactive region 241 to that of the upper active region 235. This matchingof the lateral gain profile reduces optical loss due to the mismatchbetween the gain profile and lateral optical mode(s). Ion implantationmay be achieved by any known methods used in the industry. FIG. 9further depicts the lateral waveguide which is comprised of the laserridge 222 and oxide passivation 211. The metal p-type contact may forman Ohmic contact to the top p-type semiconductor in the ridge 222. Asshown, ion implantation may be specifically directed to specificportions of the waveguide, including to those laterally outside of thelaser ridge 222, such that ion implantation is not included directlyunder the top contact 210 and between the edges of the laser ridge 222.

FIG. 10 is a flowchart 300 illustrating a method of coupling opticaloutputs from edge-emitting laser diodes into an optical fiber, inaccordance with a fourth exemplary embodiment of the disclosure. Itshould be noted that any process descriptions or blocks in flow chartsshould be understood as representing modules, segments, portions ofcode, or steps that include one or more instructions for implementingspecific logical functions in the process, and alternate implementationsare included within the scope of the present disclosure in whichfunctions may be executed out of order from that shown or discussed,including substantially concurrently or in reverse order, depending onthe functionality involved, as would be understood by those reasonablyskilled in the art of the present disclosure.

As is shown by block 302, a coupled laser diode is formed by connectinga first guiding layer to a second guiding layer in a single epitaxialstructure, wherein a tunnel junction is positioned between the first andsecond guiding layers. Optical outputs of first and second guidinglayers are emitted into a single collimator (block 304). The opticaloutput of the single collimator is emitted into an optical fiber (block306).

The method may further include a number of additional steps, which mayinclude any of the steps, structures, or functionality disclosedrelative to FIGS. 4-9 or FIG. 11. For example, the optical output fromthe single collimator may be corrected with a corrective opticalassembly positioned between the single collimator and the optical fiber,wherein the corrective optical assembly includes a second collimator, acorrective optic device, and a focusing lens. The tunnel junction may beformed between the first and second guiding layers from two thin,heavily doped layers positioned in contact with one another. The activelayers of the first and second guiding layers may share a commonvertical waveguide formed from the first guiding layer in contact withone of the two thin, heavily doped layers and the second guiding layerpositioned in contact with another of the two thin, heavily dopedlayers. The first guiding layer may include an undoped guide layer and an-guide layer positioned adjacent to the n++ layer, wherein the n-guidelayer contacts the n++ layer, and wherein the second guiding layerfurther comprises an undoped guide layer and a p-guide layer, whereinthe p-guide layer contacts the p++ layer. The n-guide layer and thep-guide layer of the first and second guiding layers, respectively, mayhave an optical refractive index equal to or greater than an opticalrefractive index of the undoped guide layers of the first and secondguiding layers.

FIG. 11 is a flowchart 310 illustrating a method of coupling opticaloutputs from edge-emitting laser diodes into an optical fiber, inaccordance with the fourth exemplary embodiment of the disclosure. Itshould be noted that any process descriptions or blocks in flow chartsshould be understood as representing modules, segments, portions ofcode, or steps that include one or more instructions for implementingspecific logical functions in the process, and alternate implementationsare included within the scope of the present disclosure in whichfunctions may be executed out of order from that shown or discussed,including substantially concurrently or in reverse order, depending onthe functionality involved, as would be understood by those reasonablyskilled in the art of the present disclosure.

The method of FIG. 11 provides additional details to the method of FIG.10. For instance, in FIG. 11, the method may begin with epitaxial growthof a multi junction laser diode, which includes connecting a firstguiding layer to a second guiding layer in a single epitaxial structure,where a tunnel junction is positioned between the first and secondguiding layers (block 312). The multi junction laser diode may then besubjected to front end processing (block 314), such as etching,photolithography, or a similar processing technique. The front and/orrear facet of the laser diode may be mirror-coated (block 316). A chipis solder reflowed and mounted to the carrier and bonded thereto (block318). A fast axis collimator is aligned and mounted (block 320) and aslow axis collimator is aligned and mounted (block 322). A focusinglens, or a plurality of focusing lenses, are aligned and mounted (block324). The optical fiber is aligned and mounted (block 326). Then, theoptical outputs of first and second guiding layers are emitted into thefast axis collimator first, then through the slow-axis collimator, thenthrough the focusing lens or lenses, and finally into the optical fiber(block 328).

It should be emphasized that the above-described embodiments of thepresent disclosure, particularly, any “preferred” embodiments, aremerely possible examples of implementations, merely set forth for aclear understanding of the principles of the disclosure. Many variationsand modifications may be made to the above-described embodiment(s) ofthe disclosure without departing substantially from the spirit andprinciples of the disclosure. All such modifications and variations areintended to be included herein within the scope of this disclosure andthe present disclosure and protected by the following claims.

What is claimed is:
 1. A fiber-coupled laser diode device comprising: afirst guiding layer connected to a second guiding layer in a singleepitaxial structure, each of the first and second guiding layers havingan active layer; a tunnel junction positioned between the first andsecond guiding layers, the tunnel junction formed from two thin, heavilydoped layers positioned in contact with one another; and a commonvertical waveguide shared by the active layers of the first and secondguiding layers, the common vertical waveguide formed from the firstguiding layer in contact with one of the two thin, heavily doped layersand the second guiding layer positioned in contact with another of thetwo thin, heavily doped layers.
 2. The fiber-coupled laser diode deviceof claim 1, wherein the active layer of each of the first and secondguiding layers further comprises a quantum well active layer.
 3. Thefiber-coupled laser diode device of claim 2, wherein the two thin,heavily doped layers of the tunnel junction further comprises a n++layer and a p++ layer, wherein the first guiding layer is a n-guidelayer and the second guiding layer is a p-guide layer.
 4. Thefiber-coupled laser diode device of claim 3, wherein the first guidinglayer further comprises an undoped guide layer and a n-guide layerpositioned adjacent to the n++ layer, wherein the n-guide layer contactsthe n++ layer, and wherein the second guiding layer further comprises anundoped guide layer and a p-guide layer, wherein the p-guide layercontacts the p++ layer.
 5. The fiber-coupled laser diode apparatus ofdevice 4, wherein the n-guide layer and the p-guide layer of the firstand second guiding layers, respectively, have an optical refractiveindex equal to or greater than an optical refractive index of theundoped guide layers of the first and second guiding layers.
 6. A methodof coupling optical outputs from edge-emitting laser diodes into anoptical fiber, the method comprising: forming a fiber-coupled laserdiode device by connecting a first guiding layer to a second guidinglayer in a single epitaxial structure, wherein a tunnel junction ispositioned between the first and second guiding layers; emitting opticaloutputs of first and second guiding layers into a single collimator; andemitting the optical output from the single collimator into an opticalfiber.
 7. The method of claim 6, further comprising correcting theoptical output of the single collimator with a corrective opticalassembly positioned between the single collimator and the optical fiber,wherein the corrective optical assembly comprises: a second collimator;a corrective optic device; and a focusing lens.
 8. The method of claim6, further comprising forming the tunnel junction between the first andsecond guiding layers from two thin, heavily doped layers positioned incontact with one another.
 9. The method of claim 8, wherein activelayers of the first and second guiding layers share a common verticalwaveguide formed from the first guiding layer in contact with one of thetwo thin, heavily doped layers and the second guiding layer positionedin contact with another of the two thin, heavily doped layers
 10. Themethod of claim 8, further comprising matching a lateral gain profile ofthe active layers to a gain profile of a lateral waveguide by implantingions on either side of the lateral waveguide at a depth proximate to thetunnel junction.
 11. The method of claim 6, wherein the first guidinglayer further comprises an undoped guide layer and a n-guide layerpositioned adjacent to the n++ layer, wherein the n-guide layer contactsthe n++ layer, and wherein the second guiding layer further comprises anundoped guide layer and a p-guide layer, wherein the p-guide layercontacts the p++ layer.